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中西洋一郎  教授

Yoichiro Nakanishi

台北科技大學光電工程系

研究室：光華館221室

電話：(02)2771-2171#4694

e-mail:  nakanishi@rie.shizuoka.ac.jp

 

任職機構

授課

日本

Research Institute of Electronics, Shizuoka University（靜岡大學）

博士班：Advanced Display Technology

碩士班： Electronic Display Engineering

大學部：Introduction of Electronics

台灣

講座教授（交換教授）

碩博合開：材料光學與技術（Photophysic Science and Technology），講授有關螢光材料（Luminescent materials）等內容

國立台北科技大學

光電工程系

Scientific Specialization

Basic Field : Photophysics of luminescence materials

Research Experience and Background : Physics of Semiconductors, Materials Science, Surface Science, Vacuum Science and Technology, Phosphor Technology, Display Technology, Lighting Technology

Area of Interest : Semiconductors, Technologies of Displays and Lighting

Current Research Interest : Synthesis of new phosphors for FEDs, ELDs, PDPs, Lighting, etc., Fabrication of EL devices.

Publication List

 

1)    M.Sychov, Y.Nakanishi, H.Kominami, Y.Hatanaka and K.Hara : “Optimization of Low-Voltage Cathodoluminescnece of Electron-Beam-Evaporated Y2O3:Eu Thin Film Phosphor”, Jpn. J. Appl. Phys. 47[9] (2008) 7206-7210.

2)    K.Sakurai, H.Kinoshita, G.Ohno, Y.Nakanishi and M.Kubota : “Luminescence Properties of Amorphous Carbon Films Formed Using Supermagnetron Plasma”, Jpn. J. Appl. Phys. 47[9] (2008) 7216-7219.

3)    L.Fenenko, Y.Nakanishi, S.Tokito and A.Konno : “Electric Characterization of New Bright-Blue-Light-Emitting Poly(9,9-dioctylfluorenyl-2,7-diyl)-End Capped with Polyhedral Oligomeric Silsesquioxanes”, Jpn. J. Appl. Phys., 45[1B] (2006) 550-554.

4)    M.Sychov, Y.nakanishi, H.Nakajima, H.Kominami and Y.Hatanaka : “Effect of the Thickness on Morphology and Low-Voltage Cathodoluminescence”, Jpn. J. Appl. Phys., 45[1A] (2006) 141-145.

5)    S.Hakamata, H.Kominami, Y.Nakanishi and Y.Hatanaka : “Luminescent Properties of CaS:Cu,F TFEL Devices on Si substrate”, J. of Inst. Image Information and Television Engineering, 59[7] (2005) 1067-1071. (in Japanese)

6)    Y.Fukushi, H.Kominami, Y.Nakanishi and Y.Hatanaka : “Effect of ITO surface state to the aging characteristics of thin film OLED”, Appl. Surf. Sci. 244 (2005) 537-540.

7)    Y.Arai, H.Kominami, Y.Nakanishi and Y.hatanaka : “Luminescent properties of SrGa2S4:Eu thin film phosphors deposited by two electron beam evaporation”, Appl. Surf. Sci. 244 (2005) 473-476.

8)    S.Hakamata, M.Ehara, H.Kominami, Y.Nakanishi and Y.Hatanaka : “Prparation of CaS:Cu,F thin-film electroluminescent devies with an emission icluding purple region”, Appl. Surf. Sci. 244 (2005) 469-472.

9)    M.M.Sychov, S.V.Mjakin, Y.Nakanishi, V.G.Korsakov, I.V.Vasiljeva, V.V.Bakhmetjev, O.V.Solovjeva and E.V.Komarov : “Study of active surface centers in electroluminescent ZnS:Cu,Cl phosphors”, Appl. Surf. Sci. 244 (2005) 461-464.

10) K.Ohara, T.Seino, A.Nakamura, T.Aoki, H.Kominami, Y.Nakanishi and Y.Hatanaka : ”Sb excimer-laser doping in ZnO films prepared by oxidation of sulfide on Si”, Appl. Surf. Sci. 244 (2005) 369-372.

11) Y.Nakanishi, A.Miyake, H.Tatsuoka, H.Kominami and Y.Hatanaka : “HRTEM observation of interface states between ZnO epitaxial film and Si(111) substrate”, Appl. Surf. Sci. 244 (2005) 359-364.

12) S.Hakamata, M.Ehara, H.Fukuda, H.Kominami, Y.Nakanishi and Y.Hatanaka : “Blue emission from CaS:Cu,F thin-film electroluminescent device fabricated on Si substrate”, Appl. Phys. Lett., 85[17] (2004) 3729-3730.

13) M.Ehara, S.Hakamata, H.Fukada, K.Ohmi, H.Kominami, Y.Nakanishi and Y.Hatanaka : “Effects of H2S Treatment on Structural and Luminescent Characteristics of Blue-Emitting (Sr1-xCax)S:Cu,F Thin Films”, Jpn. J. Appl. Phys. 43[10] (2004) 7120-7124.

14) Y.Inoue, T.Hoshino, S.Takeda, K.Ishino, A.Ishida, H.Fujiyasu, H.Kominami, H.Mimura, Y.Nakanishi and S.Sakakibara : “Stromg luminescence from dislocatio-free GaN nanopillars”, Appl. Phys. Lett., 85[12] (2004) 2340-2342.

15) H.Kominami, C.Eguchi, M.Kottaisamy, Y.Nakanishi and Y.Hatanaka “Synthesis of Zn-diped Y2O3:Eu fine-particle phosphor by the sol-gel method”, J. Vac. Sci. Technol. B, 22[3] (2004) 1386-1389.

16) M.Iwamaru, H.Nakajima, H.Kominami, Y.Nakanishi and Y.Hatanaka : “Luminescent properties of SrGa2S4:Sm thin-film phosphors under low-voltage excitation”, J. Vac. Sci. Technol. B, 22[3] (2004) 1382-1385.

17) Y.Nakanishi, K.Kimura, H.Kominami, H.Nakajima, Y.Hatanaka and G.Shimaoka : “Dependence of structural and luminescent characteristics of Y2O3:Er thin film phosphors on substrate”, Appl. Surf. Sci., 212-213 (2003) 815-819.

18) V.A.Gnatyuk, T.Aoki, Y.Nakanishi and Y.Hatanaka : “Surface state of CdTe crystals irradiated by KrF excimer laser pulses near the melting threshold”, Surf. Sci., 542 (2003) 142-149.

19) A.M.Wrobel, A.Walkiewicz-Pietrzykowska, J.E.Klemberg-Sapieha, Y.Nakanishi, T.Aoki and Y.Hatanaka : “Remote Hydrogen Plasma Chemical Vapor Deposition from (Dimethylsilyl)(trimethylsilil)methane. 1. Kinetics of the Process; Chemical and Morphological Structure of Deposited Silicon-Carbon Films”, Chemistry of Materials, 15[8] (2003) 1749-1756.

20) Y.Nakanishi, H.Nakajima, N.Uekura, H.Kominami, M.Kottaisamy and Y.Hatanaka : “Influence of Preparation Condition on the Structural and Luminescent Propeties of Blue-Emitting SrGa2S4:Ce Thin-Film Phosphors”, J. Electrochem. Soc., 149[10] (2002) H165-H168.

21) .A.Miyake, H.Kominami, T.Aoki, N.Azuma, Y.Nakanishi and Y.Hatanaka : “Formation and Exciton Emission of an Epitaxial ZnO Thin Film by Oxidation of ZnS Film on Si Substrate”, J. Surf. Sci. Soc. Jpn., 23[8] (2002) 492-496. (in Japanese)

22) K.Tanaka, S.Okamoto, H.Kominami, Y.Nakanishi, X.Du and A.Yoshikawa : “Cathodoluminescence properties of blue-emitting SrGa2S4:Ce thin-films grown by low-temperature process”, J. Appl. Phys., 92[2] (2002) 834-837.

23) K.Kouga, R.Yoneyama, H.Kuwabara, T.Watanabe, W.Tomoda, H.Tatsuoka and Y.Nakanishi : “Preparation of CdTe Quantum Structures on ZnTe by Hot-Wall Epitaxy”, Phys. Stat. Sol. (b), 229[1] (2002) 149-153.

24) T.Aoki, Y.Shimizu, A.Miyake, A.Nakamura, Y.Nakanishi and Y.Hatanaka : “p-TypeZnO Layer Formation by Excimer Laser Doping”, Phys. Stat. Sol. (b), 229[2] (2002) 911-914.

25) Y.Nakanishi, T.Nakajima, H.Kominami, M.Ehara and Y.Hatanaka : “Luminescent Properties of Blue-Emitting SrS:Cu,F Thin-Film EL Devices”, Phys. Stat. Sol. (b), 229[2] (2002) 1011-1014.

26) A.Miyake, H.Kominami, T.Aoki, N.Azuma, Y.Nakanishi and Y.hatanaka : “Study on the Structural Transformation Process from ZnS Epitaxial Film Grown on Si Substrate to ZnO Epitaxial Film by Oxidation”, Phys. Stat. Sol. (b), 229[2] (2002) 829-833.

27) A.Miyake, H.Kominami, T.Aoki, H.Tatsuoka, H.Kuwabara, Y.Nakanishi and Y.Hatanaka : “Growth of epitaxial ZnO thin film by oxidation of epitaxial ZnS thi  film on Si(111)”, Intl. J. of Modern Phys. B, 15[28-30] (2001) 3861-3864.

28) M.Ogita, K.Higo, Y.Nakanishi and Y.Hatanaka : “Ga2O3 thin film for oxygen sensor at high temperature”, Appl. Surf. Sci., 175-176 (2001) 721-725.

29) H.Kuwabara, A.Unno, K.Kouga, T.Watanabe, W.Tomoda, Y.Nakanishi and H.Tatsuoka : “Growth of CdTe islands on ZnTe by hot-wall epitaxy”, Appl. Surf. Sci., 175-176 (2001) 643-648.

30) G.Shimaoka, T.Aoki, Y.Nakanishi, Y.Hatanaka and T.Udagawa : “Structure and optical properties of (001)GaAs surfaces nitrided in plasma-assisted NH3 gas”, Appl. Surf. Sci., 175-176 (2001) 436-441.

31) A.M.Wrobel, A.Walkiewicz-Pietrzykowska, Y.Hatanaka, S.Wickramanayaka and Y.Nakanishi : “Oligomerization and Polymerization Steps in Remote Plasma Chemical Vapor Deosition of Silicon-Carbon and Silica Films from Organosilicon Sources”, Chemistry of Materials, 13[5] (2001) 1884-1895.

32) A.Miyake, H.Kominami, H.Tatsuoka, H.Kuwabara, Y.Nakanishi and Y.Hatanaka : “Growth of Epitaxial ZnO Thin Film by Oxidation of Epitaxial ZnS Film on Si(111) Substrate”, Jpn. J. Appl. Phys., 39[11B], (2000) L1186-L1187.

33) D.Noda, T.Aoki, Y.Nakanishi and Y.Hatanaka : “Epitaxial growth of CdSeTe films by remote plasma enhanced metal organic chemical vapor deposition”, Vacuum, 59 (2000) 701-707.

34) A.Kawasumi, T.Nakajima, H.Kominami, Y.Nakanishi and Y.Hatanaka : “Dependence of luminescent properties of blue-emitting CaS:Cu,F thin films on annealing conditions”, J. Crystal Growth, 214/215, (2000) 963-966.

35) A.Miyake, H.Kominami, H.Tatsuoka, H.Kuwabara, Y.Nakanishi and Y.Hatanaka : “Luminescent properties of ZnO thin films grown epitaxially on Si substrate”, J. Crystal Growth, 214/215, (2000) 294-298.

36) A.M.Wrobel, S.Wickramanayaka, K.Kitamura, Y.Nakanisi and Y.Hatanaka : “Structure – Property Relationships of Amorphous Hydrogenated Silicon–Carbon Films Produced by Atomic Hydrogen – Induced CVD from a Single–Source Precursor”, Chem. Vap. Deposition, 6[6] (2000) 315-322.

37) H.Kominami, T.Aoki, Y.Nakanishi and Y.Hatanaka : “Penetration depth of low-energy electrons into ZnS”, J. Luminescence, 87-89 (2000) 1152-1154.

38) H.Nakajima, H.Kominami, T.Aoki, Y.Nakanishi and Y.Hatanaka : “Preparation of SrGa2S4:Ce thin films for low-energy cathodoluminescence”, J. Luminescence, 87-89 (2000) 1146-1148.

39) D.Noda, T.Aoki, Y.Nakanishia and Y.Hatanaka : “Growth of CdZnTe and CdSeTe crystals for p-I-n radiation detectors”, J. Crystal Growth, 214/215 (2000) 1121-1124.

40) M.Kottaisamy, K.Horikawa, H.Kominami, T.Aoki, N.Azuma, T.Nakamura, Y.Nakanishi and Y.Hatanaka : “Synthesis and Characterization of Fine Particle Y2O3S:Eu Red Phsphor at Low-Voltage Excitation”, J. Electrochem. Soc., 147[4] (2000) 1612-1616.

41) Y.Nakanishi, H.Wada, H.Kominami, M.Kottaisamy, T.Aoki and Y.Hatanaka : “Growth and Characterization of Y2O3:Tm Thin-Film Blue-Emitting Phosphors”, J. Electrochem. Soc., 146[11] (1999) 4320-4323.

42) D.Noda, T.Aoki, Y.Nakanishi and Y.Hatanaka : “Epitaxial Growth and Nitrogen Radical Doping of CdZnTe”, J. Electrochem. Soc., 146[9] (1999) 3482-3484.

43) M.Kottaisamy, K.Horikawa, H.Kominami, T.Aoki, N.Azuma, T.Nakamura, Y.Nakanishi and Y.Hatanaka : “Synthesis of ultra fine particle Y2O2S:Eu red phosphor for field emission displays”, Bulletin of Electrochemistry, 15[7-8] (1999) 312-314.

44) Y.-Y.Xu, T.Ogishima, D.Korzec, Y.Nakanishi and Y.Hatanaka : “Deposition of SiNx Thin Film Using m-SLAN Surface Wave Plasma Source”, Jpn. J. Appl. Phys., 38[7B] (1999) 4538-4541.

45) Y.Nakanishi, A.Miyake, H.Kominami, T.Aoki, Y.Hatanaka and G.Shimaoka : “Preparation of ZnO thin films for high-resolution field emission display by electron beam evaporation”, Appl. Surf. Sci., 142 (1999) 233-236.

46) M.Ogita, N.Saika, Y.Nakanishi and Y.Hatanaka : “Ga2O3 thin films for high-temperature gas sesors”, Appl. Sur. Sci., 142 (1999) 188-191.

47) M.Niraula, T.Aoki, Y.Nakanishi and Y.Hatanaka : “Growth and doping studies of CdTe epilaye on GaAs substrates by low-pressure plasma-radical-assisted metalorganic chemical vapor deposition”, J. Crystal Growth, 200 (1999) 90-95.

48) A.H.Jayatissa, F.Sato, N.Saito, K.Sawada, T.Masuda and Y.Nakanishi : “Field emission properties of BNB coated Si tips by pulsed ArF laser deposition”, J. Vac. Sci. Technol. B, 17[1] (1999) 237-240.

49) H.Kominami, K.Horikawa, T.Aoki, T.Nakamura, N.Azuma, Y.Nakanishi and Y.Hatanaka : “Low Voltage Cathodoluminescent Properties of Phosphors with Conduction Treatment by the Sol-Gel Method”, J. Surf. Sci. Soc. Jpn., 19[7] (1998) 31-36. (in Japanese)

50) Z.-T Jiang, T.Yamaguchi, M.Aoyama, Y.Nakanishi and L.Asinovsky : “Spectroellipsometric characterization of thin silicon nitride films”, Thin Solid Films, 313-314 (1998.6) 298-302.

51)     M.Niraula, T.Aoki, Y.Nakanishia and Y.Hatanaka: “Radical assisted metalorganic chemical vapor deposition of CdTe on GaAs and carrier transport mechanism in CdTe/n-GaAs heterojunction”, J. Appl. Phys., 83[5] (1998) 2656-2661.

52) T.Aoki, T.Ogishima, A.M.Wrobel, Y.Nakanishi and Y.Hatanaka : “Silicon nitride film growth by remote plasma CVD using Tris(dimethylamino)silane”, Vacuum, 51 [4] (1998) 747-750.

53) A.H.Jayatissa, F.Sato, N.Saito, H.Ohnishi, K.Takizawa, Y.Nakanishi and T.Yamaguchi : “Structural properties of carbon films deposited by pulsed ArF laser ablation: effects of substrate temperature, bias and H2 pressure”, Materials Science and Engineering B, 55 (1998)143-152.

54) D.Noda, T.Aoki, Y.Nakanishi and Y.Hatanaka : “ZnTe epitaxial growth by remote plasma enhanced metal organic chemical vapor deposition”, Vacuum, 51 [4] (1998) 619-622.

55) Y.Hatanaka, T.Aoki, T.Arakawa, D.Noda and Y.Nakanishi : “Heavily doped p^type ZnSe layer formation by excimer laser doping”, J. Crystal Growth, 184/185 (1998) 425-428.

56) T.Aoki, T.Ogishima, Y.Nakanishi, Y.Hatanaka and J.Tyczkowski : “Microcrystalline Ge Thin Films Prepared by Remote Plasma CVD from Tetraethylgermanium”, J. Chemical Vapor Deposition, 6 [3] (1998)196-208.

57) N.Madan, T.Aoki, Y.Nakanishi and Y.Hatanaka : “Radical assisted metalorganic chemical vapor deposition of CdTe on GaAs and carrier tranport mechnism in CdTe/n-GaAs heterojunction”, J. Appl. Phys., 83 (1998) 2656-2661.

58) Y.Hatanaka, T.Aoki, M.Niraula, Y.Aoki and Y.Nakanishi : “Heavy p-type doping ZnSe-based II-VI semiconductors using an excimer laser”, SPIE, 3283 (1998) 78-86.

59) M.Mandai, K.Takada, T.Aoki, T.Fujinami, Y.Nakanishi and Y.Hatanaka : “AFM observation for the change of surface morphology of TPD thin films due to thermal annealing”, Synthetic Metals, 91[1-3] (1998) 123-124.

60) F.Nakano, N.Uekura, Y.Nakanishi, Y.Hatanaka and G.Shimaoka : “Preparation of CaGa2S4:Ce thin films for blue emitting thin-film EL device”, Appl. Surf. Sci. 121/122 (1997) 160-162.

61) D.Noda, T.Aoki, Y.Nakanishi and Y.Hatanaka : “Preparation of Heavily N-Type ZnSe Doped by Iodine in Remote Plasma Enhanced Metal Organic Chemical Vapor Deposition”, Jpn. J. Appl. Phys., 36[10] (1997) 6302-6303.

62) M.Ogita, T.Fujinami, Y.Nakanishi and Y.Hatanaka : “Surface reflection and nonlinearities in ac Hall measurements of liquid metals”, Appl. Surf. Sci., 113/114  (1997) 777-782.

63) S.Wickramanayaka, Y.Nakanishi and Y.Hatanaka : “On the chemistry of a-SiO2 deposition by plasma enhanced CVD”, Appl. Surf. Sci., 113/114 (1997) 670-674.

64) J.Tyczkowski, B.Pietrzyk, Y.Nakanishi and Y.Hatanaka : “Electrical and optical properties of carbon-tin films plasma-deposited from tetramethyltin in a three-electrode reactor”, Appl. Surf. Sci., 113/114 (1997) 534-538.

65) H.Kominami, T.Nakamura, K.Sowa, Y.Nakanishi, Y.Hatanaka and G.Shimaoka : “Low voltage cathodoluminescent properties of phosphors coated with In2O3 by sol-gel method”, Appl. Surf. Sci., 113/114 (1997) 519-522.

66) A.H.Jayatissa, T.Yamaguchi, Y.Nakanishi, K.Ishikawa and Y.Hatanaka : “Structural propoerties of poly-Is deposited by rf glow discharge using 100% SiH4”, Appl. Surf. Sci., 113/114 (1997) 462-466.

67) K.Gurumurugan, D.Mangalaj, Sa.K.Narayandass, Y.Nakanishi and Y.Hatanaka : “Composition studies on CdO thin films formed by spray pyrolysis and sputtering”, Appl. Surf. Sci., 113/114 (1997) 422-425.

68) H.Tatsuoka, K.Isaji, H.Kuwabara, Y.Nakanishi, T.Namura and H.Fujiyasu : “Growth of epitaxial MnSb layers on Is substrates by hot-wall epitaxy”, Appl. Surf. Sci., 113/114 (1997) 48-52.

69) T.Aoki, M.Morita, D.Noda, Y.Nakanishi, Y.Hatanaka and N.Azuma : “ZnSe epitaxial growth on Si(100) and Ge(100) by H-radical assisted MOCVD”, Appl. Surf. Sci., 113/114 (1997) 23-27.

70) Y.Nakanishi, N.Uekura, F.Nakano and Y.Hatanaka : “CL and EL properties of blue-emitting SrGa2S4:Ce thin films prepared by multi-source deposition”, J. Luminescence 72-74 (1997) 373-374.

71) Y.Nakanishi, H.Kominami and Y.Hatanaka : “Cathodoluminescent properties of Zn1-xCdxS:Ag,Cl phosphors including In2O3excited by low-energy electrons”, J. of Soc. Information Display, 4[4] (1996) 357-359.

72) A.H.Jayatissa, T.Yamaguchi, Y.Hatanaka, Y.Nakanishi and K.Sano : “Spectro-llipsometric Study of Poly-Si Films Grown on Sapphire by RF Glow Discharge at Low Temperature”, Phys. Stat. Sol.(a), 158 (1996) 265-273.

73) H.Kominami, T.Nakamura, Y.Nakanishi and Y.Hatanaka : “Improvement of Low Voltage Cathodoluminescent Properties of Zinc Sulfide Phosphors by Sol-Gel Method”, Jpn. J. Appl. Phys., 35[12A] (1996) L1600-L1602.

74) T.Nakamura, K.Hayashi, Y.Nakanishi, K.Ito and H.Fujiyasu : “Manganese(II) in superlattices consisting of alternate cadmium telluride and zinc sulfide layers”, J. Chem. Soc., Faraday Trans., 92[21] (1996) 4167-4171.

75) A.H.Jayatissa, Y.Hatanaka, Y.Nakanishi and T.Yamaguchi : “Low Temperature Fabrication of Thin Film Transistors Using Microcrystalline Si Deposited by Cathode-Type RF Grow Discharge”, Jpn. J. Appl. Phys., 35[11] (1996) 5687-5688.

76) Y.Nakanishi, T.Imada, K.Sawada, T.Mizuno and Y.Hatanaka : “Integration of thin-film electroluminescent device using hot electron injection into emitting layer on Si substrate”, Inorganic and Organic Electroluminescence, ed. R.H.Mauch and H.-E.Gumlich, Proc. Int. Workshop on Inorganic and Organic Electroluminescence, Berlin, (1996) 395-398.

77) Y.Nakanishi, F.Shiba, K.Sowa, H.Tatsuoka, H.Kuwabara, T.Nakamura and Y.Hatanaka : “Preparation of blue-emitting SrGa2Se4:Ce thin films by multi-source deposition”, Appl. Surf. Sci., 100/101 (1996) 639-642.

78) Y.Hatanaka, T. Aoki, M. Morita, S. Wickramanayaka and Y. Nakanishi : “ZnSe crystal growth by radical assisted MOCVD”, Appl. Surf. Sci., 100/101 (1996) 621-624

79) H.Kuwabara, H.Asai, H.Tatsuoka, T.Nakamura, Y.Nakanishi and H.Fujiyasu : Picosecond photoluminescence properties of CdTe-ZnTe superlattices prepared by hot-wall epitaxy, J. Crystal Growth, 159 (1996) 839-842.

80) H.Tatsuoka, H.Kuwabara, M.Oshita, Y.Nakanishi, T.Nakamura and H.Fujiyasu : “Structural characterization of epitaxial derromagnetic MnSb layers grown by hot-wall epitaxy”, Appl. Surf. Sci., 92 (1996) 382-386.

81) Y.Xin, P.D.Brown, C.B.Boothroyd, C.J.Humphreys, H.Tatsuoka, H.Kuwabara, M.Oshita, T.Nakamura, H.Fujiyasu and Y.Nakanishi : “The microstructure of MnSb grown on (001)GaAs by hot wall epitaxy”, J. Crystal Growth, 156 (1996) 155-162 .

82) H.Tatsuoka, H.Kuwabara, M.Oshita, Y.Nakanishi, T.Nakamura and H.Fujiyasu : “Growth of epitaxial ferromagnetic MnSb layers by hot-wall epitaxy”, J. Appl. Phys., 77[5] (1996) 2190-2192.

83) A.H.Jayatissa, Y.Hatanaka, Y.Nakanishi and K.Ishikawa : “Low-temperature growth of micro-crystalline silicon using 100% SiH4 by rf glow discharge method”, J. Phys. D, Appl. Phys., 29 (1996) 1636-1640.

84) A.H.Jayatissa, M.Suzuki, Y.Nakanishi and Y.Hatanaka : “Ellipsometric study of thermal and laser annealed amorphous and microcrystalline silicon films”, Appl. Surf. Sci., 92 (1996) 300-305.

85) T.Aoki, M. Morita, S. Wickramanayaka, Y. Nakanishi and Y. Hatanaka : “Growth of ZnSe thin films by radical assisted MOCVD method”, Appl. Surf. Sci., 92 (1996) 132-137 .

86) Y.Nakanishi, S.Naito, T.Nakamura, Y.Hatanaka and G.Shimaoka : “The influence of residual O2 gas in vacuum on the structural and luminescent properties of ZnF2:Mn thin films”, Appl. Sur. Sci., 92 (1996) 400-403.

87) Y.Nakanishi, S.Mori, T.Nakamura, H.Tatsuoka, H.Kuwabara and Y.Hatanaka : “Effect of insulating layer structural properties for thin-film electroluminescent devices”, Materials Chemistry and Physics, 43[3] (1996) 292-295.

88) A.H.Jayatissa, Y.Hatanaka, Y.Nakanishi and T.Yamaguchi : “Properties of heavily phosphorous-doped mc-Si deposited by mesh attached cathode-type r.f. glow discharge”, Thin Solid Films, 274 (1996) 113-119.

89) A.M.Wrobel, S.Wickramanayaka, Y.Nakanishi, Y.Fukuda and Y.Hatanaka : “Remote Hydrogen Plasma Chemical Vapor Deposition of Amorphous Hydro-genated Silicon-Carbon Films from an Organosilane Molecular Cluster as a Novel Single-Source Precursor: Structure, Growth Mechanism, and Properties of the  Deposit”, Chemistry of Materials, 7[7] (1995) 1403-1413.

90) A.M.Wrobel, S.Wickramanayaka, Y.Nakanishi and Y.Hatanaka : “High-quality amorphous hydrogenated silicon carbide coating by remote plasma chemical vapor deposition from a single-source precursor”, J. Material Process. Tech., 53 (1995) 477-482 .

91) H.Tatsuoka, H.Kuwabara, M.Oshita, Y.Nakanishi, T.Nakamura and H.Fujiyasu : “Growth of epitaxial ferromagnetic MnSb layers by Hot-Wall Epitaxy”, J. Appl. Phys., 77[5] (1995) 2190-2192.

92) A.Ishida, E.Yamamoto, K.Ishino, K.Ito, H.Fujiyasu and Y.Nakanishi : “Growth of GaN films by hot wall epitaxy”, Apll. Phys. Lett., 67[5] (1995) 665-666 .

93) A.H.Jayatissa, Y.Nakanishi and Y.Hatanaka : “Microcrystalline Silicon Films Deposited by Cathode-Type RF Glow Discharge Technique”, J. Electrochem. Soc., 142[5] (1995) 1663-1666.

94) S.Wickramanayaka, Y.Nakanishi and Y.Hatanaka : “Relationship between hydrogenation and optical properties of dielectric a-SiC:H films prepared by tetrakis(trimethylsilyl)silane in remote H2 plasma”, J. Appl. Phys., 77 [5] (1995) 2061-2066 .

95) T.Nakamura, M.Kamiya, H.Watanabe and Y.Nakanishi : “Preparation and Characterization of Zinc Sulfide Phosphors Coated with Barium Titanate Using Sol-Gel Method”, J. Electrochem. Soc., 142[3] (1995) 949-952.

96) A.H.Jayatissa,, M.Suzuki, Y.Nakanishi and Y.Hatanaka : “Microcrystalline structure of poly-Si films prepared by cathode-type r.f. glow discharge, Thin Solid films”, 256 (1995) 234-239.

97) T.Aoki, S.Wickramanayaka, A.M.Wrobel, Y.Nakanishi and Y.Hatanaka : “Preparation and Characterization of Copper Films Deposited in Hydrogen Remote Plasma by Copper (II) Acetylacetonate”, J. Electrochem. Soc., 142[1] (1995) 166-169 .

98) S.Wickramanayaka, Y.Hatanaka, Y.Nakanishi and A.M.Wrobel : “Preparation and Deposition Mechanism of a-SiC:H Films by Using Hexamethyldisilane in a Remote H2 Plasma”, J. Elctrochem. Soc., 141[10] (1994) 2910-2914.

99) Y.Nakanihshi, S.Naito, T.Nakamura, Y.hatanaka and G.Shimaoka : “Preparation of Fluoride Thin-Film EL Devices and Their Interface Properties”, 15[6] (1994) 370-375. (in Japanes)

100) 100) H.Kuwabara, H.Tatsuoka, Y.Nakanishi, A.Ishida, H.Fujiyasu, M.Nakayama and T.Yamanari : “HgTe and Hg1-xCdxTe vapor phase epitaxial growth under con- trolled Hg pressure”, J. Crystal Growth, 138 (1994) 964-969.

101) 101) S.Wickramanayaka, A.Matsumoto, Y.Nakanishi, N.Hosokawa and Y.Hatanaka : “Remote Plasma SiO2 Deposition by Teethoxysilane with Chemically and energetically Different Atomic Species”, Jpn. J. App. Phys., 33[6A] (1994) 3520-3527.

102) 102) K.Sowa, M.Tanabe, S.Furukawa, Y.Nakanishi and Y.Hatanaka : “Growth of Y2O2S:Eu Thin Films by Reactive Magnetron Sputtering and Electroluminescent Characteristics”, Jpn. J. Appl. Phys., 32[12A] (1993) 5601-5602.

103) A.H.Jayatissa, Y.Nakanishi and Y.Hatanaka : “Preparation of Polycrystalline Silicon Thin Films by Cathode-Type RF Grow Discharge Method”, Jpn. J. Appl. Phys. 32[9A] (1993) 3729-3733.

104) 104) Y.Nakanishi, T.Ito, H.Tatsuoka, H.Kuwabara, Y.Hatanaka and G.Shimaoka : “Preparation and Luminescent Properties of SrSe:Ce Thin Films for EL Device by Multi-Source Deposition”, 14[6] (1993) 352-357. (in Japanese)

105) Y.Hatanaka, N.Morosawa, M.Suzuki and Y.Nakanishi : “Thin-film high-gain photodetector and switching devices using a-Si:H and a-SiC:H multilayers”, SPIE Vol.1982 Photoelectronic Detection and Imaging '93, (1993) 110-117.

106) G.Zhou, Y.Nakanishi and Y.Hatanaka : “Light emission effect in Anodic Oxidation of Si”, J. Electrochem. Soc., 140[5] (1993) 1468-1471.

107) H.Tatsuoka, H.Kuwasbara, Y.Nakanishi and H.Fujiyasu : “CdTe(111) growth on misoriented Si(100) substrates by hot-wall epitaxy”, J. Crystal Growth, 129 (1993) 686-690.

108) Y.Nakanishi, T.Ito, Y.Hatanaka and G.Shimaoka : “Preparation and luminescent properties of SrSe:Ce thin films”, Appl. Surf. Sci., 65/66 (1993) 515-519.

109) Y.Hatanaka, M.Suzuki, K.Watanabe and Y.Nakanishi : “Thin film switching devices using amorphous silicon/silicon carbon multilayers”, Appl. Surf. Sci., 65/66 (1993) 532-535.

110) H.Tatsuoka, H.Kuwabara, Y.Nakanishi and H.Fujiyasu : “Unusual strain caused by twin boundary structure in CdTe(111) films”, Appl. Surf. Sci., 65/66 (1993) 426-432.

111) T.Nakamura, H.Muramatsu, Y.Nakanishi and H.Fujiyasu : “EPR investigations on ZnS:Mn thin films prepared by hot wall technique”, App. Surf. Sci., 65/66 (1993) 437-441.

112) K.Sowa, M.Tanabe, S.Furukawa, Y,Nakanishi and Y.Hatanaka : “Electrolumines-cent Characteristics of Y2O2S:Eu Thin Films Deposited by Reactive Magnetron Sputtering”, Electroluminescence, Proc. of the Sixth Int. Workshop on Electrolumi-nescence, El Paso, Texas, U.S.A. (1992), edited by J.P.Singh and J.C.McClure (Cinco Puntos Press, El Paso), (1992) 15-319.

113) Y.Nakanishi, Y.Hatanaka and G.Shimaoka : “Control of Orientation in ZnS Thin Films and Improvement of Efficiency of Thin Film Electroluminescent Devices”, Electroluminescence, Proc. of the Sixth Int. Workshop on Electroluminescence, El Paso, Texas, U.S.A. (1992), edited by J.P.Singh and J.C.McClure (Cinco Puntos Press, El Paso), (1992) 304-308.

114) G.Zhou, Y.Nakanishi and Y.Hatanaka : “Hot Electron Light Emission at Si-SiO2 interface”, Electroluminescence, Proc. of the Sixth Int. Workshop on Electrolumi-nescence, El Paso, Texas, U.S.A. (1992), edited by J.P.Singh and J.C.McClure (Cinco Puntos Press, El Paso), (1992) 74-77.

115) K.Sowa, M.Tanabe, S.Furukawa, Y.Nakanishi and Y.Hatanaka : “Characteristics of Y2O3:Eu/ZnS/Y2O3:Eu Red Light Emitting Electroluminescent Devices”, Jpn. J. Appl. Phys. 31[11] (1992) 3598-3602.

116) G.Zhou, Y.Nakanishi and Y.Hatanaka : “Hot-electron injection EL (HEI-EL) devices”, Semicond. Sci. Technol., 7 (1992) B549-B551.

117) H.Tatsuoka, H.Kuwabara, Y.Nakanishi and H.Fujiyasu : “CdTe(111) growth on sapphire (0001) substrates by hot wall epitaxy”, Thin Solid Films, 213[1], (1992) 1-5.

118) A.Matsumoto, S.Meikle, Y.Nakanishi and Y.Hatanaka : “Deposition of Aluminum Nitride by Remote Plasma-Enhanced Chemical Vapor Deposition Using Triiso-buthyl Aluminum”, Jpn. J. Appl. Phys., 31[4] (1992) L423-L425.

119) H.Tatsuoka, H.Kuwabara, Y.Nakanishi and H.Fujiyasu : “New approach to the mechanism of strain release in lattice-mismatched epitaxial films”, J. Crystal Growth, 117[1-4] (1992) 554-559.

120) T.Nakamura, Y.Takeuchi, H.Muramatsu, H.Fujiyasu and Y.Nakanishi : “ESR studies on luminescent ZnS:Mn films and CdS-ZnS:Mn superlattices deposited on a GaAs(100) substrates by hot-wall epitaxy”, Appl. Surf. Sci., 48/49 (1991) 478-482.

121) Y.Nakanishi, Y.Fukuda, Y.Hatanaka and G.Shimaoka : “The dependence of the polycrystalline structure and electroluminescent properties of ZnS:Mn deposited on Y2O3 films on thickness”, Appl. Surf. Sci., 48/49 (1991) 297-300.

122) Y.Nakanishi, Y.Suzuki, T.Nakamura, Y.Hatanaka, Y.Fukuda, A.Fujisawa and G.Shimaoka : “Coloration of Sn-Sb-O thin films”, Appl. Surf. Sci., 48/49, (1991) 55-58.

123) M.Nagoshi, T.Suzuki, Y.Fukuda, K.Terashima, Y.Nakanishi, M.Ogita, Y.Syono and M.Tachiki : “Oxygen-loss effects on superconductivity of Bi2Sr2CaCu2Oy systems”, Phys. Rev. B, 43[13A] (1991) 10445-10450.

124) T.Nakamura, Y.Takeuchi, H.Fujiyasu and Y.Nakanishi : “Characterization of Epitaxially Grown ZnS:Mn Films on a GaAs(100) Substrate Prepared by the Hot-Wall Epitaxy Technique”, J. Mater. Chem., 1[3] (1991) 357-359.

125) S.Meikle, Y.Nakanishi and Y.Hatanaka : “Thin-film deposition in the after glows of N2 and H2 microwave plasmas”, J. Vac. Sci. Technol. A, 9[3], (1991) 1051-1054.

126) H.Nomura, S.Meikle, Y.Nakanishi and Y.Hatanaka : “Remote plasma deposition of aluminum nitride”, J. Appl. Phys., 69[2] (1991) 990-993.

127) H.Tatsuoka, H.Kuwabara, Y.Nakanishi and H.Fujiyasu : “CdTe(111)B growth on oriented and misoriented GaAs(100) grown by hot-wall epitaxy”, J. Appl. Phys., 68[9], (1990) 4592-4597.

128) S.Meikle, Y.Nakanishi and Y.Hatanaka : “The Role of Hydrogen Atoms in Afterglows Deposition of Silicon Thin Films”, Jpn. J. Appl. Phys., 29[11] (1990) L2130-L2132.

129) K.Sowa, M.Tanabe, Y.Nakanishi and Y.Hatanaka : “Structure and Luminescent Property of Y2O2S:Eu Thin Films Prepared by Magnetron Sputtering”, Jpn. J. Appl. Phys., 29[11] (1990) L2077-L2079.

130) Y.Nakanishi, H.Ohshima, Y.Suzuki, Y.Fukuda and G.Shimaoka :”The Structural Changes in The Oxide Films of Tin Caused by Oxidation, Vacuum”, 41[4-6] (1990) 1157-1159.

131) Y.Nakanishi, T.Suzuki, H.Tatsuoka, H.Kuwabara, H.Fujiyasu, Y.Fukuda and G.Shimaoka : “Preparation of SrSe Thin Films by Hot Wall Deposition”, Vacuum, 41[4-6] (1990) 1454-1456.

132) Y.Nakanishi, K.Natsume, Y.Fukuda, G.Shimaoka, H.Tatsuoka, H.Kuwabara and E.Nakazawa : “Luminescent Properties of CaS Phosphors Activated by Copper and Fluorine”, J. Crystal Growth, 101[1-4] (1990) 462-465.

133) Y.Nakanishi, G.Shimaoka, H.Tatsuoka and H.Kuwabara : “Preparation of ZnS:Ag, Cl Thin Films Emitting Blue Luminescence”, Thin Solid films, 187[2] (1990) 323-329.

134) H.Tatsuoka, H.Kuwabara,Y.Nakanishi and H.Fujiyasu : “Strain Relaxation of CdTe(100) Layers on GaAs(100) Substrates Grown by Hot-Wall Epitaxy”, J. Appl. Phys., 67[11] (1990) 6860-6864.

135) H.Yokoi, K.Yagishita and Y.Nakanishi : “Studies on the Formation of Magnetic Colloidal Dispersions in the Presence of Poly(vinyl alcohol)”, Bull. Chem. Soc. Japan, 63[3] (1990) 746-748.

136) S.Meikle, H.Nomura, Y.Nakanishi and Y.Hatanaka : “Reactions of Atomic Nitrogen and Trimethyl Aluminum Downstream from a Nitrogen Microwave Plasma”, J. Appl. Phys., 67[1] (1990) 483-486.

137) Y.Fukuda, K.Terashima, Y.Nakanishi, T.Suzuki, M.Nagoshi, Y.Syono and M.Tachiki : “Core-Level and Valence-Band Electronic States of Bi2Sr2Ca1-x YxCu2Oy Studied by Photoemission”, Physica C,162-164 (1989) 1315-1316.

138) Y.Nakanishi, G.Zhou, T.Ando and G.Shimaoka : “Preparation of a Low Voltage ZnS Thin Film Electroluminescent Device Using Injection of Hot Electrons into the Emitting Layer”, Electroluminescence, Proc. the Forth Int. Workshop on Electro-luminescence”, Tottori, Japan (1988), edited by S.Shionoya and H.Kobayashi (Springer-Verlag, Berlin) (1989) 65-69.

139) Y.Nakanishi, Y.Suzuki, G.Zhou, M.Ogita, Y.Fukuda and G.Shimaoka : “Analysis of Interface States in CaS/Y2O3/SiO2/ITO Multilayer Thin Films by AES”, J. Surf. Sci. Soc. Jpn., 10[6] (1989) 399-404 (in Japanese)

140) H.Tatsuoka, H.Kuwabara, H.Fujiyasu and Y.Nakanishi : “Growth of CdTe on GaAs by Hot Wall Epitaxy and Its Stress Relaxation”, J. Appl. Phys., 65[5] (1989) 2073-2077.

141) T.Nakamura, Y.Suzuki, N.Saito, Y.Nakanishi and G.Shimaoka : “ESR Observation of Ar+-irradiated a-Si1-xCx:H Films Deposited on Quartz Substrates”, Phil. Mag. B 60[2] (1989) 257-263.

142) Y.Nakanishi, K.Kimura, G.Shimaoka and M.Ogita : “Epitaxial Growth of ZnS:Mn/ Y2O3/ZnS/Si(100) Multilayer Thin Films”, Appl. Surf. Sci., 33/34 (1988) 677-684.

143) T.Nakamura, Y.Suzuki, N.Saito, Y.Nakanishi and G.Shimaoka : “Electron Spin Resonance Obsevations of Ar＋-Irradiated a-Si1-xCx:H Films”, Appl. Surf. Sci., 33/34 (1988) 784-791.

144) H.Fujiyasu, T.Sasaya, M.Katayama, K.Ishino, A.Ishida, H.Kuwabara, Y.Nakanishi and G.Shimaoka : “Properties of CdS-ZnS Superlattices Prepared by Hot Wall Epitaxy”, Appl. Surf. Sci., 33/34 (1988) 854-861.

145) T.Nakamura, N.Saito, Y.Suzuki, Y.Nakanishi and G.Shimaoka : “Electron Spin Resonance of Hydrogenated Amorphous Silicon-Carbon Alloy Films Prepared by Magnetron Sputtering”, Phil. Mag. Lett., 56[4] (1987) 161-163.

146) Y.Nakanishi and G.Shimaoka : “The Structure and Electroluminescent Charac- teristics of ZnS:Mn Thin Films”, J. Vac. Sci. Technol. A, 5[4] (1987) 2092-2097.

147) H.Fujiyasu, K.Mochizuki, Y.Yamazaki, M.Aoki, A.Sasaki, H.Kuwabara,  Y.Nakanishi and G.Shimaoka : “Properties of ZnTe-ZnSe and -ZnS Superlattices Prepared by Hot Wall Epitaxy”, Proc. 2nd. Int. Conf. Modulated Semiconductor Structures, Kyoto, Japan, (1985) 362-367.

148) Y.Nakanishi, H.Yamashita and G.Shimaoka : “Preparation and Properties of ZnS: Ag,Cu,Cl Phosphor Powder Emitting Blue Electroluminescence”, Jpn. J. Appl. Phys. 20[11] (1981) 2261-2262.
 
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